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Defect structure of erbium-doped 〈111〉 silicon layers formed by solid phase epitaxy

Author:

R.N Kyutt,Nikolai A Sobolev,Yu.A Nikolaev,V.I Vdovin

Publication:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Publisher:

Elsevier

Date:

January 2001

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