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Chapter:

Correlation between End-Of-range defect densities and electrical properties of p+/n junctions formed by B implantation into Ge-preamorphised Si substrates

Book:

Ion Beam Modification of Materials

Author:

D. Alquier,C. Bergaud,A. Martinez,M. Minondo,C. Jaussaud,L. Laanab,C. Bonafos,A. Qaverie

Publisher:

Elsevier

Date:

1996

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