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High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy

Author:

Tatsuro Iwabuchi,Takashi Ito,Masaki Yamamoto,Kentaro Sako,Yuichi Kanayama,Kazuhiro Nagase,Takashi Yoshida,Fumiaki Ichimori,Ichiro Shibasaki

Publication:

Journal of Crystal Growth

Publisher:

Elsevier

Date:

1 May 1995

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