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Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology

Author:

Elangovan Mani,Erfan Abbasian,Muthukumaran Gunasegeran,Sobhan Sofimowloodi

Publication:

AEU - International Journal of Electronics and Communications

Publisher:

Elsevier

Date:

September 2022

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