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Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

Author:

M. Capriotti,E. Bahat Treidel,C. Fleury,O. Bethge,C. Ostermaier,M. Rigato,S.L.C. Lancaster,F. Brunner,H. Detz,O. Hilt,J. Würfl,D. Pogany,G. Strasser

Publication:

Solid-State Electronics

Publisher:

Elsevier

Date:

November 2016

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