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A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

Author:

Shohei Kinoshita,Tomo Sakanoue,Masayuki Yahiro,Kazuo Takimiya,Hideaki Ebata,Masaaki Ikeda,Hirokazu Kuwabara,Chihaya Adachi

Publication:

Solid State Communications

Publisher:

Elsevier

Date:

January 2008

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