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Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2

Author:

Darin Leonhardt,Josephine Sheng,Jeffrey G. Cederberg,Malcolm S. Carroll,Qiming Li,Manual J. Romero,Darius Kuciauskas,Daniel J. Friedman,Sang M. Han

Publication:

Thin Solid Films

Publisher:

Elsevier

Date:

1 September 2011

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