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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Author:

Prerna Chauhan,S. Hasenöhrl,A. Minj,M.P. Chauvat,P. Ruterana,J. Kuzmík

Publication:

Applied Surface Science

Publisher:

Elsevier

Date:

1 February 2020

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