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Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

Author:

P. Salmen,M.W. Feil,K. Waschneck,H. Reisinger,G. Rescher,I. Voss,M. Sievers,T. Aichinger

Publication:

Microelectronics Reliability

Publisher:

Elsevier

Date:

August 2022

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