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2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate

Author:

Jialin Li,Yian Yin,Fengbo Liao,Mengxiao Lian,Xichen Zhang,Keming Zhang,Yafang Xie,You Wu,Bingzhi Zou,Zhixiang Zhang,Jingbo Li

Publication:

Materials Science in Semiconductor Processing

Publisher:

Elsevier

Date:

January 2023

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