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High-temperature interfacial stability of In2O3 FETs with SiO2 versus Al2O3 insulators enabling 3 nm channel scaling

Author:

Hye-Jin Oh,Jun-Yeoub Lee,Jun Young Beom,Ji Eun Sun,Chi-Hoon Lee,Chang-Kyun Park,Duho Kim,Minhyuk Kim,Junseok Lee,Seunghyun Cho,Donghwan Lee,Jinhyuk Yoo,Jin-Seong Park

Publication:

Applied Surface Science

Publisher:

Elsevier

Date:

1 June 2026

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